1 aos semiconductor product reliability report AOTF7T60 , rev a plastic encapsulated device alpha & omega semiconductor, inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AOTF7T60 . accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. review of final electrical test result confirm s that AOTF7T60 passes aos quality and reliability requirements. table of contents: i. product description ii. package and die information iii. environmental stress test summary and result iv. reliability evaluation v. appendix : test data i. product description: the AOTF7T60 is fa bricated using an advanced high voltage mosfet process t hat is designed to deliver high levels of performance and robustness in popular ac - dc applications. by providing low rds(on), ciss and crss along with guaranteed avalanc he capability this parts can be adopted quickly into new an d existing offline power supply designs. for halogen free add "l" suffix to part number: AOTF7T60 l details refer to the datasheet. ii. die / package information: AOTF7T60 process standard sub - micron 600v n - channel mosfet package type to 220 f lead frame bare cu die attach soft solder bond ing al wire mold material epoxy resin with silica filler moisture level up to level 1 * note * based on info provided by assembler and mold compound supplier
3 iii. result of reliability stress for AOTF7T60 iv. reliability evaluation fit rate (per billion): 2. 92 mttf = 39075 years the presentation of fit rate for the individual product reliability is restricted by the actual burn - in sample size of the selected product ( AOTF7T60 ). failure rate determination is based on jedec standard jesd 85. fit means one failure per billion hours. fai lure rate (fit) = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 1.83 x 10 9 / [ 2x ( 4x77x168 + 6x77 x 500 +1 2 x 77x 1 000 ) x259 ] = 2. 92 mttf = 10 9 / fit = 3.42 x 10 8 hrs = 39075 years chi2 = chi squared distribution, determined by the number of failures and confidence interval n = total number of units from htrb and htgb tests h = duration of htrb/htgb testing af = acceleration factor from test to use conditions (ea = 0.7ev and tuse = 55 c ) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s )] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 130 deg c 150 deg c af 25 9 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltz m anns constant, 8.6 17164 x 10 - 5 e v / k test item test condition time point lot attribution total sample size number of failures reference standard msl precondition 168hr 85 c /85%rh +3 cycle reflow@2 5 0 c - 21 lots 4158 pcs 0 jesd22 - a113 htgb temp = 150 c , vgs=100% of vgsmax 168 hrs 500 hrs 1000 hrs 2 lots 3 lots 6 lot s 847 pcs 77 pcs / lot 0 jesd22 - a108 htrb temp = 150 c , vds=80% of vdsmax 168 hrs 500 hrs 1000 hrs 2 lots 3 lots 6 lots 847 pcs 77 pcs / lot 0 jesd22 - a108 hast 130 c , 85% rh , 33.3 psi, vgs = 10 0% of vgs max 96 hrs 15 lots (note a *) 115 5 pcs 77 pcs / lot 0 jesd22 - a110 pressure pot 121 c , 29.7psi , rh=100% 96 hrs 18 lots (note a *) 1386 pcs 77 pcs / lot 0 jesd22 - a102 temperature cycle - 65 c to 150 c , air to air, 250 / 500 cycles 21 lots (note a *) 1617 pcs 77 pcs / lot 0 jesd22 - a104
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